Standards Incorporated by Reference (SIBR) Database
Procurement SIBR (P-SIBR)
All Types of Standards
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Procurement SIBR Records
| SDO |
Document Number |
Document Title |
Edition |
Incorp By |
| Defense Supply Center (DSC) |
MIL-PRF-19500/605 |
SIMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOATL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N72964, 2N7296, AND 2N7298 JANTXVM, D, R, H, AND JANSM, D AND R (SUPERSEDING MIL-S-19500/605) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/606 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7291, 2N7293, 2N7295 AND 2N7297 JANTXVM, D, R, AND JANSM, D AND R (SUPERSEDING MIL-S-19500/606) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/607 |
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL AND P-CHANNEL, SILICON TYPE 2N7337 JANTX, JANTXV, JANS, AND JANC (SUPERSEDING MIL-S-19500/607) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/608 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE OR COMMON ANODE CENTER TAP, TYPES 1N6660 AND 1N6660R JAN, JANTX, JANTXV AND JANS (SUPERSEDING MIL-S-19500/608) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/609 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, AND 1N6641US, JAN, JANTX, JANTXV, JANJ AND JANS (SUPERSEDING MIL-PRF-19500/609B) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/610 |
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 AND 1N6677UR-1 JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC (SUPERSEDING MIL-PRF-19500/610C) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/612 |
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER, TYPE 2N7372, JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-S-19500/612) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/613 |
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N7373, JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-S-19500/613) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/614 |
SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTOR N-CHANNEL SILICON TYPES 2N7380 AND 2N7381 JANTXV M D R F G AND H JANS M D R F G AND H (SUPERSEDING MIL-PRF-19500/614A) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/615 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383 JANTXV M, D, RM AND F AND JANS M, D, R, AND F (SUPERSEDING MIL-S-19500/615A) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/616 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST (SUPERSEDING MIL-S-19500/616) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/617 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6672 THROUGH 1N6674, AND 1N6672R THROUGH 1N6674R, JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-S-19500/617) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/619 |
SEMICONDUCTOR DEVICE, DIODE, SCHOTTKY POWER RECTIFIERS, TYPES 1N6849- 1N6856, 1N6849U1- 1N6856U1 1N6849U2- 1N6856US AND 1N6849U3- 1N6856U3 JAN, JANTX AND JANTXV (SUPERSEDING MIL-PRF-19500/619A) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/620 |
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, TECTIFIER, SCHOTTKY BARRIER, TYPES 1N5822 AND 1N822US JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC (SUPERSEDING MIL-PRF-19500/620C) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/621 |
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER TYPE 2N7369, JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-S-19500/621) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/622 |
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER, TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-S-19500/622) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/623 |
SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICONE, HIGH-POWER TYPE 2N7371 JANTX JANTXV, AND JANS (SUPERSEDING MIL-S-19500/623) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/624 |
SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, HIGH-POWER,TYPE 2N7370 JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-S-19500/624) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/625 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N6683, 1N6684, 1N6685, 1N6683US, 1N6684US, AND 1N6685US, JAN, JANTX,JANTXV,JANS, JANHC AND JANKC (SUPERSEDING MIL-S-19500/625 DATED JULY 15, 1994) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/627 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, (SUPERSEDING MIL-S-19500/627) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/628 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6690 THROUGH 1N6693, 1N669OUS THROUGH 1N6693US, JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-S-19500/628) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/629 |
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N6702 AND 1N6702US, JAN, JANTX, JANTXV, JANJ, JANS, JANHC AND JANKC (SUPERSEDING MIL-PRF-19500/629A) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/630 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U JANTXV, R, AND F AND JANS, R AND F (SUPERSEDING MIL-S-19500/630A) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/631 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECT) TRANSISTORS, N-CHANNEL SILICON TYPES 2N7395, 2N7396, 2N7397, AND 2N7398 JANSD AND JANSR (SUPERSEDING MIL-PRF-19500/631) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/632 |
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), N-CHANNEL SILICON TYPES 2N7399, 2N7400, 2N7401, AND 2N7402 JANSD AND JANSR (SUPERSEDING MIL-S-19500/632) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/633 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL SILICON TYPES 2N7403, AND 2N7404 JANSD AND JANSR (SUPERSEDING MIL-S-19500/633) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/634 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED, (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR (SUPERSEDING MIL-PRF-19500/634) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/635 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST,JANTX, JANTXV, AND JANS AND POWER RECTIFIER, STANDARD RECOVERY, TYPES 1N6710B THU 1N6716B AND 1N6710BR THRU 1N6716BR, JANTXV (SUPERSEDING MIL-PRF-19500/635) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/638 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPE 2N7410 JANSD AND JANSR (SUPERSEDING MIL-S-19500/638) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/639 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7411 JANSD AND JANSR (SUPERSEDING MIL-S-19500/639) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/642 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6762 - 1N6765 AMD 1M6762R - 1N6765R JANTX JANTXV AND JANS (SUPERSEDING MIL-PRF-19500/642) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/643 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6766 THROUGH 1N6767, AND 1N6767R THROUGH 1N6767R, JANTX, JANTXV, AND JANS |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/644 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6768 THROUGH 1N6771 AND 1N6768R THROUGH 1N6771R JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-PRF-19500/644) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/645 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6772, 1N6773, 1N6772R AND 1N6773R, JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-PRF-19500/645) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/646 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6774 THROUGH 1N6777 JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-PRF-19500/646) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/647 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6778 AND 1N6779, JAN, JANTX, JANTXV AND JANS (SUPERSEDING MIL-PRF-19500/647) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/649 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, SCHOTTKY, TYPE 1N6781, JAN, JANTX, JANTXV AND JANS (SUPERSEDING MIL-PRF-19500/649) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/652 |
SEMICONDUCTOR DEVICE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/654 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPE 2N430T1 JANTXVD, JANTXVR, AND JANSR |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/655 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR AND F (SUPERSEDING MIL-PRF-19500/655A) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/656 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE OR COMMON ANODE CENTER TAP, TYPES 1N6785 AND 1N6785R JAN, JANTX, JANTXV AND JANS |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/657 |
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N AND P-CHANNEL, SILICON VARIOUS TYPES JANHC AND JANKC (SUPERSEDING MIL-PRF-19500/657) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/658 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7438, AND 2N7439 JANSD AND JANSR |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/659 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7440, AND 2N7441 JANSD AND JANSR |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/660 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPES 2N7424, 2N7425 AND 2N7426 JANTXVR, JANTXVF, JANSR, AND JANSF |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/661 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7444, 2N7434, 2N7391 AND 2N7392 JANTXVR; AND JANSR |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/662 |
SEMICONDUCTORS DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY), P-CHANNEL SILICON TYPES 2N7422, 2N7422U, 2N7423 AND 2N7423U JANTXVR AND F AND JANSR AND F |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/663 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7431, 2N7432, AND 2N7433 JANTXVR, F, G, AND H; AND JANSR, F, G, AND H |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/664 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7431U, 2N7432U AND 2N7433U JANTXVR, F, G, AND H; AND JANSR, F, G, AND H |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/665 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY), TRANSISTOR, P-CHANNEL SILICON TYPE 2N7445T1, JANSD, R |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/666 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7454U1, 2N7455U1 JANSD, R |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/667 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7456U1, 2N457U1, AND 2N7459U1, JANTXVD, JANTXVR, JANSD, AND JANSR |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/668 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL, SILICON TYPE 2N7462U1, JANSD-R |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/669 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, SURFACE MOUNT POWER RECTIFIER, TYPES 1N6804UEG2 THROUGH 1N6810UEG2 JAN, JANTX AND JANTXV |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/670 |
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N6826, 1N6826US, 1N6831 AND 1N6831US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/671 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, COMMON CATHODE OR ANODE CENTER TAP, TYPES 1N6828, 1N6828R, 1N6833, 1N6833R, NN6828U3 AND 1N6833U3 JAN, JANTX, JANTXV, JANS |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/672 |
SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC,NPN, SILICON, SWITCHING, TYPE 2N222AUE1 JAN, JANTX, JANJ |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/673 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 HANTXVR, F, G, AND H AND JANSR, F, G, AND H |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/674 |
SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, LOW NOISE TYPE 2N2484UE1 JAN, JANTX, JANJ |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/675 |
PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2 AND 2N7464T2 AND U5 SUFFIXES JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/675A) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/676 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS N-CHANNEL, SILICON TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/676) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/678 |
SEMICONDUCTOR DEVICE, SILICON, DUAL SCHOTTKY CENTER TAP POWER RECTIFIER, SURFACE MOUNTED, TYPES 1N6840U3 AND 1N6841U3, JAN, JANTX, JANTXV, JANS |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/679 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY POWER RECTIFIER, SURFACE MOUNTED, TYPE 1N6844U3, JAN, JANTX, JANTXV, AND JANS |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/680 |
SEMICONDUCTOR DEVICE, SIOSE, SILICON, DUAL SCHOTTKY CENTER TAP POWER RECTIFIER, SURFACE MOUNTED, TYPE 1N6842U3, JAN, JANTX, JANTXV, AND JANS |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/681 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY CENTER TAP POWER RECTIFIER, SURFACE MOUNTED TYPES1N6843U3, JAN, JANTX, JANTXV, AND JANS |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/682 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY POWER RECTIFIER, SURFACE MOUNT TYPE 1N6845U3, JAN, JANTX, JANTXV, AND JANS |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/683 |
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F,G, AND H AND JANSR, F, G, AND H |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/684 |
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPES 2N7472U2, 2N7473U2 AND 2N7474U2 JANTXVR AND JANSR |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/685 |
SEMICONDUTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/686 |
SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N2907AUE1 JAN, JANTX, JANJ |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/687 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7509, 2N7510, AND 2N7511 JANTXVD, R AND JANSD, R |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/689 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS N-CHANNEL, SILICON TYPES 2N7512, 2N7513, AND 2N7514 JANTXVD, R AND JANSD, R |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/691 |
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N4148UE2 JAN, JANTX, AND JANJ |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/692 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS N-CHANNEL, SILICON TYPES 2N7515, 2N7516, AND 2N7517 JANTXVD, R AND JANSD, R |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/694 |
SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, TYPE 2N3700UEI JAN, JANTX, JANJ |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/695 |
SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N4033UEI JAN, JANTX, JANJ |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/696 |
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANISISTOR, PLASTIC, N-CHANNEL, SILICON TYPE 2N7537, 2N7537A, JAN, JANTX |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/697 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7478T1 JANTXVR, F, G, AND J AND JANSR, F, G, AND H |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/698 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 AND 2N7471T1 JANTXVR F G AND H AND JANSR F G AND H |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/699 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOATL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7527U3, 2N7528U3, 2N7529U3 JANTXVD, R & JANSD, R |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/700 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7494U5 - 2N7496U5 JANTXVR F G & H & JANSR F G & H |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/701 |
SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED(TOTAL DOSE AND SINGLE EVENT EFFECTS)TRANSISTOR, N-CHANNEL SILICON TYPES 2N7491T2 2N7492T2 2N7493T2 JANTXVR F G H JANSR F G H |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/702 |
SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TOTAL DOSE & SINGLE EVENT EFFECTS TRANSISTOR N-CHANNEL SILICON TYPES 2N7482T3 - 2N7484T3 JANTXVR F G & H JANSR F G & H |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/703 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE & SINGLE EVENT EFFECTS) TRANSISTOR N-CHANNEL SILICON TYPES 2N7479U3 - 2N7481U3 JANTXVR F G & H & JANSR F G & H |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/704 |
SEMICODUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7485U3 - 2N7486U3 JANTXVR AND JANSR |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/705 |
SEMICODUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED(TOTAL DOSE AND SINGLE EVENT EFFECTS)TRANSISTOR, N0CHANNEL, SILICON TYPES 2N7488T3 - 2N7490T3 JANTXVR AND JANSR |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/706 |
SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED(TOTAL DOSE & SINGLE EVENT EFFECTS)TRANSISTOR N-CHANNEL SILICON TYPE 2N7497T2 2N7498T2 2N7499T2 JANTXVR JANSR |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/707 |
SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED(TOTAL DOSE & SINGLE EVENT EFFECTS)TRANSISTOR N-CHANNEL SILICON TYPE 2N7500U5 2N7501U5 2N7502U5 JANTXVR JANSR |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/708 |
DISPLAYS, DIODE, LIGHT EMITTING, SOLID STATE, RED, NUMERIC AND HEXADECIMAL, WITH ON BOARD DECODER/DRIVER TYPES 4N51, 4N52, 4N53 AND 4N54 JAN AND JANTX (SUPERSEDING MIL-D-87157/1 AND QPL-87157-11) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19500/710 |
SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPES 2N6674T1 2N6674T3 2N6675T1 2N6675T3 JAN JANTX JANTXV |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-19565 |
COATING COMPOUNDS, THERMAL INSULATION, FIRE- AND WATER-RESISTANT, VAPOR-BARRIER (ADMINISTRATIVELY CHANGED FROM MIL-C TO MIL-PRF) (SUPERSEDING MIL-C-19565B) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-C-20079 |
CLOTH, GLASS; TAPE, TEXTILE GLASS; & THREAD, GLASS & WIRE-REINFORCED GLASS (SUPERSEDING MIL-C-20079G) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-21038 |
TRANSFORMERS, PULSE, LOW POWER GENERAL SPECIFICATION FOR (SUPERSEDING MIL-T-21038D) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-21038/27 |
PERFORMANCE SPECIFICATION SHEET TRANSFORMERS, PULSE, LOW POWER (SUPERSEDING MIL-T-21038/27D) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-F-21424 |
FILTERS, POLARIZING (FOR OPTICAL INSTRUMENTS) (SUPERSEDING MIL-F-21424) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-I-22129 |
INSULATION TUBING, ELECTRICAL, POLYTETRAFLUOROETHYLENE RESIN, NONRIGID (SUPERSEDING MIL-I-22129B) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-PRF-22191 |
BARRIER MATERIALS TRANSPARENT FLEXIBLE HEAT SEALABLE (SUPERSEDING MIL-B-22191D) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-S-22473 |
SEALING, LOCKING, AND RETAINING COMPOUNDS: (SINGLE-COMPONENT) (SUPERSEDING MIL-S-22473D) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-DTL-22520 |
CRIMPING TOOLS, WIRE TERMINATION, GENERAL SPECIFICATION FOR (SUPERSEDING MIL-C-22520F DATED MARCH 19, 1976) |
NDG |
NASA |
| Defense Supply Center (DSC) |
MIL-C-22520/1 |
CRIMPING TOOLS, TERMINAL, HAND, WIRE TERMINATION FOR WIRE BARREL SIZES 12 THROUGH 20 (SUPERSEDING MIL-C-22520/1B) |
NDG |
NASA |
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